ERIA School of Government Holds 7th Semiconductor Policy Dialogue at Micron Memory Japan in Higashi-Hiroshima
ERIA School of Government
20 November 2025

ERIA School of Government Holds 7th Semiconductor Policy Dialogue at Micron Memory Japan in Higashi-Hiroshima


Hiroshima, 20 November 2025: The ERIA School of Government (So G), in collaboration with Japan’s Ministry of Economy, Trade, and Industry (METI), held the seventh round of the Executive Dialogue on Semiconductor Policy with Micron Memory Japan, which operates a major dynamic random access memory (DRAM) manufacturing facility in Higashi-Hiroshima City, Hiroshima Prefecture, Japan.

The dialogue gathered representatives from Indonesia, including H.E. Nezar Patria, Vice Minister of Communications and Digital Affairs; H.E. Faisol Riza, Vice Minister of Industry; and Mr Sofyari Rahman, Industry Attaché at the Embassy of Indonesia in Tokyo. Key representatives of Micron Memory Japan attended, including Mr Masato Otsu, Senior Director of Global Facilities & Construction North Asia, who is also Representative Director of Micron Memory Japan Facility, K. K.

Discussions covered an overview of Micron Memory Japan’s operations, including its DRAM manufacturing processes, production strategies, and the integration of AI for production and testing. Micron also introduced its operations in Singapore and Malaysia and discussed the critical role Southeast Asia can play in the future of semiconductor manufacturing, research and development, and talent development in the age of AI.

The session highlighted the significance of talent development, resource capacity, and advanced technology in boosting the semiconductor industry, while emphasising the importance of deepening cross-border partnerships. This round further supports the ERIA So G’s dedication to enhancing regional policy co-operation and promoting shared strategic priorities.


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